Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

We present an overview on approaches currently employed to fabricate advanced quantum
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …

The heteroepitaxy of semiconductor pairs with a small lattice mismatch is a process of
tremendous interest in materials science and technology. The principal mechanism of strain …

The photoluminescence (PL) of the combined Ge/Si structures representing a combination
of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of …

Dislocation networks are one of the most principle sources deteriorating the performances of
devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a …

Photoluminescence properties of highly strained Ge/Si multi-layer heterostructures with
incorporated groups of laterally ordered SiGe quantum dots are studied in the wide range of …

In this work, we show that the room-temperature photoluminescence intensity from Ge ion-
bombarded (GIB) epitaxial Ge on Si quantum dots (QD) can be improved by their vertical …

Les théorèmes classiques de finitude et de commutation au changement de traits des cycles
proches (pour la topologie étale) sont généralisés au cas d'une base de dimension …

The strain field distribution at the surface of a multilayer structure with disklike SiGe
nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot …

Arrays of Ge quantum dot molecules were grown by molecular beam epitaxy using a
template, composed of a multilayer structure with layers of vertically aligned three …