Engineering cell alignment in vitro

Y Li, G Huang, X Zhang, L Wang, Y Du, TJ Lu… - Biotechnology …, 2014 - Elsevier
Cell alignment plays a critical role in various cell behaviors including cytoskeleton
reorganization, membrane protein relocation, nucleus gene expression, and ECM …

Semiconductor quantum dots for integrated quantum photonics

S Hepp, M Jetter, SL Portalupi… - Advanced Quantum …, 2019 - Wiley Online Library
Quantum mechanics promises to have a strong impact on many aspects of research and
technology, improving classical analogues via purely quantum effects. A large variety of …

Multi-primary-color quantum-dot down-converting films for display applications

S Lin, G Tan, J Yu, E Chen, Y Weng, X Zhou, S Xu… - Optics …, 2019 - opg.optica.org
We propose and fabricate a multi-primary-color (MPC) quantum-dot down-converting film
(QDDCF). A four-primary-color QDDCF composed of red (R), yellowish green (YG), bluish …

Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics

YR Wang, IS Han, M Hopkinson - Nanophotonics, 2023 - degruyter.com
Epitaxially grown semiconductor quantum dots (QDs) and quantum rings (QRs) have been
demonstrated to be excellent sources of single photons and entangled photon pairs …

[HTML][HTML] Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning

IS Han, YR Wang, M Hopkinson - Applied Physics Letters, 2021 - pubs.aip.org
We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by
droplet epitaxy using in situ direct laser interference patterning. Two-dimensional arrays of …

Nitride quantum light sources

T Zhu, RA Oliver - Europhysics Letters, 2016 - iopscience.iop.org
Prototype nitride quantum light sources, particularly single-photon emitters, have been
successfully demonstrated, despite the challenges inherent in this complex materials …

Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

J Canet-Ferrer, G Munoz-Matutano, J Herranz… - Applied Physics …, 2013 - pubs.aip.org
We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown
on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography …

Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots

J Herranz, L Wewior, B Alén, D Fuster… - …, 2015 - iopscience.iop.org
We present growth and optical characterization measurements of single InAs site-controlled
quantum dots (SCQDs) grown by molecular beam epitaxy on GaAs (001) patterned …

Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si (001) substrates

HM Chen, YW Suen, SJ Chen, GL Luo, YP Lai… - …, 2014 - iopscience.iop.org
Thermally activated redistribution of Si surface atoms is found to be a crucial factor for the
growth of aligned Ge dots on pit-patterned Si (001) substrates. A phenomenon of Si …

In-assisted deoxidation of GaAs substrates for the growth of single InAs/GaAs quantum dot emitters

T Xia, YJ Cho, M Cotrufo, I Agafonov… - Semiconductor …, 2015 - iopscience.iop.org
We report a systematic study of the In-assisted deoxidation (IAD) of epitaxial GaAs (100)
substrates. Optimized IAD conditions resulting in a pit-free and smooth GaAs surface are …