Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

This review focuses on the emerging field of core–multishell (CMS) semiconductor
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …

III–V semiconductor nanowire arrays show promise as a platform for next-generation solar
cells. However, the theoretical efficiency limit for converting the energy of sunlight into …

A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is
presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …

The influences of droplet size on the growth of self-catalyzed ternary nanowires (NWs) were
studied using GaAsP NWs. The size-induced Gibbs–Thomson (GT) effect makes the smaller …

In this paper, we study band-to-band and intersubband (ISB) characteristics of Si-and Ge-
doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in …

We report the structural, optical and electrical properties of GaAs quantum dots (QDs)
embedded along GaP nanowires. The GaP nanowires contained p–i–n junctions with 15 …

This review paper examines the crucial role of nanowires in the field of quantum computing,
highlighting their importance as versatile platforms for qubits and vital building blocks for …