Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …
Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress
A Yan, C Wang, J Yan, Z Wang, E Zhang… - Advanced Functional …, 2024 - Wiley Online Library
High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …
increasingly necessary to meet the emerging demands such as healthcare, edge computing …
Ultrathin InGaO thin film transistors by atomic layer deposition
In this letter, we report on scaled ultrathin (~ 3 nm) InGaO (IGO) thin film transistors (TFTs) by
atomic layer deposition (ALD) under a low thermal budget of 250° C. The ALD-derived IGO …
atomic layer deposition (ALD) under a low thermal budget of 250° C. The ALD-derived IGO …
Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors
Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …
High-performance short-channel top-gate indium-tin-oxide transistors by optimized gate dielectric
In this work, high-performance top-gate indium-tin-oxide (ITO) transistors with high carrier
mobility of 60 cm2/have been successfully demonstrated using optimized atomic layer …
mobility of 60 cm2/have been successfully demonstrated using optimized atomic layer …
Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors
We report ultrathin (nm) channel indium tin oxide (ITO) transistors, comparing different
precursors for atomic layer deposition (ALD) of the Al2O3 top-gate dielectric, and analyze …
precursors for atomic layer deposition (ALD) of the Al2O3 top-gate dielectric, and analyze …
Back-end-of-line-compatible fin-gate ZnO ferroelectric field-effect transistors
We report the back-end-of-line (BEOL)-compatible 3-D oxide semiconductor (OS) fin-gate
ferroelectric field-effect transistors (Fe-FETs) featuring atomic layer deposition (ALD)-grown …
ferroelectric field-effect transistors (Fe-FETs) featuring atomic layer deposition (ALD)-grown …
Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors
This study shows the effect of single spinel phase crystallization on drain-induced barrier
lowering (DIBL) of indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) with submicron …
lowering (DIBL) of indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) with submicron …
Advances in n-type crystalline oxide channel layers for thin-film transistors: materials, fabrication techniques, and device performance
In this paper, we delve into recent advancements in the fabrication of high-performance n-
type oxide semiconductor thin-film transistors (TFTs) through crystallization pathways. The …
type oxide semiconductor thin-film transistors (TFTs) through crystallization pathways. The …
Bias stress stability of ITO transistors and its dependence on dielectric properties
Amorphous oxide semiconductors (AOS) can be processed at low-temperature and their
field-effect transistors (FETs) have demonstrated very low off-state current [1], offering …
field-effect transistors (FETs) have demonstrated very low off-state current [1], offering …