Device and technology evolution for Si-based RF integrated circuits
HS Bennett, R Brederlow, JC Costa… - … on Electron Devices, 2005 - ieeexplore.ieee.org
The relationships between device feature size and device performance figures of merit
(FoMs) are more complex for radio frequency (RF) applications than for digital applications …
(FoMs) are more complex for radio frequency (RF) applications than for digital applications …
[图书][B] RF and microwave applications and systems
M Golio, MNO Sadiku, J Golio, M Pecht, AD Kraus… - 2018 - taylorfrancis.com
This volume, RF and Microwave Applications and Systems, includes a wide range of articles
that discuss RF and microwave systems used for communication and radar and heating …
that discuss RF and microwave systems used for communication and radar and heating …
RF power amplifiers for wireless communications
CE Weitzel - 24th Annual Technical Digest Gallium Arsenide …, 2002 - ieeexplore.ieee.org
RF power amplifiers for wireless communications Page 1 RF POWER AMPLIFERS FOR
WIRELESS COMMUNICATIONS (Invited Paper) CE Weitzel Motorola, Inc., Semiconductor …
WIRELESS COMMUNICATIONS (Invited Paper) CE Weitzel Motorola, Inc., Semiconductor …
A 1.8-GHz high-efficiency 34-dBm silicon bipolar power amplifier
The low-voltage power capabilities of a low-cost high-performance silicon bipolar process
were investigated. By optimizing the emitter finger layout, epilayer thickness, and collector …
were investigated. By optimizing the emitter finger layout, epilayer thickness, and collector …
Class E power amplifier circuit and associated transmitter circuits
T Brabetz, VF Fusco - US Patent 7,321,263, 2008 - Google Patents
US7321263B2 - Class E power amplifier circuit and associated transmitter circuits - Google
Patents US7321263B2 - Class E power amplifier circuit and associated transmitter circuits …
Patents US7321263B2 - Class E power amplifier circuit and associated transmitter circuits …
A SiGe controlled-class power amplifier applied to reconfigurable mobile systems
An integrated two-stage reconfigurable power amplifier (PA) operating at 1.75 GHz for
GSM1800 (DCS) and 1.95 GHz for UMTS/WCDMA is proposed. The PA uses 2.5 V supply …
GSM1800 (DCS) and 1.95 GHz for UMTS/WCDMA is proposed. The PA uses 2.5 V supply …
A very accurate design of monolithic inductors in a 2D EM simulator
E Ragonese, G Girlando… - … on Electronics, Circuits …, 2002 - ieeexplore.ieee.org
This work discusses a strategy for the design of monolithic inductors through 2D EM
simulations. Two different types of inductors are considered which were fabricated in a high …
simulations. Two different types of inductors are considered which were fabricated in a high …
[PDF][PDF] RF Power Amplifiers for Cellphones
CE Weitzel - GaAs MANTECH Inc, 2003 - Citeseer
RF Power Amplifiers for Cellphones Page 1 RF Power Amplifiers for Cellphones CE Weitzel
Motorola, Inc., Semiconductor Products Sector 2100 E. Elliot Rd., Tempe, AZ 85284 480-413-5906 …
Motorola, Inc., Semiconductor Products Sector 2100 E. Elliot Rd., Tempe, AZ 85284 480-413-5906 …
Si-Ge power amplifier for WCDMA handheld applications
K Kitlinski, G Donig, B Kapfelsperger… - … on Microwaves, Radar …, 2004 - ieeexplore.ieee.org
A monolithic radiofrequency power amplifier for WCDMA handheld applications has been
fabricated in a 0.35/spl mu/m, 40 GHz f/sub T/, volume production Si-Ge bipolar technology …
fabricated in a 0.35/spl mu/m, 40 GHz f/sub T/, volume production Si-Ge bipolar technology …
High performance SiGeC HBT integrated into a 0.25/spl mu/m BiCMOS technology featuring record 88% power-added efficiency
DMH Hartskeerl, HGA Huizing, P Deixler… - 2004 IEEE MTT-S …, 2004 - ieeexplore.ieee.org
This paper reports on the power performance of RF high-breakdown voltage (> 16.5 V)
SiGeC HBT power devices, which have been successfully integrated into a BiCMOS …
SiGeC HBT power devices, which have been successfully integrated into a BiCMOS …