Recent advances and future prospects for memristive materials, devices, and systems

MK Song, JH Kang, X Zhang, W Ji, A Ascoli… - ACS …, 2023 - ACS Publications
Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …

Artificial neuron devices

K He, C Wang, Y He, J Su, X Chen - Chemical Reviews, 2023 - ACS Publications
Efforts to design devices emulating complex cognitive abilities and response processes of
biological systems have long been a coveted goal. Recent advancements in flexible …

[HTML][HTML] A compute-in-memory chip based on resistive random-access memory

W Wan, R Kubendran, C Schaefer, SB Eryilmaz… - Nature, 2022 - nature.com
Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge
devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory …

Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-) metallic phases

X Yin, CS Tang, Y Zheng, J Gao, J Wu… - Chemical Society …, 2021 - pubs.rsc.org
The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an
extensive amount of interest amongst scientists and engineers alike and an intensive …

Compute-in-memory chips for deep learning: Recent trends and prospects

S Yu, H Jiang, S Huang, X Peng… - IEEE circuits and systems …, 2021 - ieeexplore.ieee.org
Compute-in-memory (CIM) is a new computing paradigm that addresses the memory-wall
problem in hardware accelerator design for deep learning. The input vector and weight …

Emergent ferroelectricity in subnanometer binary oxide films on silicon

SS Cheema, N Shanker, SL Hsu, Y Rho, CH Hsu… - Science, 2022 - science.org
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …

The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan… - Nature …, 2020 - nature.com
Two-dimensional materials could play an important role in beyond-CMOS (complementary
metal–oxide–semiconductor) electronics, and the development of memristors for information …