For the semiconductor industry, Complementary metal oxide semiconductor is contemplated
to be outstanding because of synthesis in Integrated Circuits (ICs). As transistor size is …

In this review, authors have retrospect the state-of-art dimension scaling and emerging other
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …

With respect to semiconductor industry, Complementary metal oxide semiconductor is
considered to be successful because of integration in Integrated Circuits (ICs). As transistor …

A new state of the art double gate junctionless transistor (DGJLT) namely the rectangular
core–shell DGJLT (RCS-DGJLT) based common source amplifier circuit is designed to …

A new charge-based analytical compact model for the drain current of junctionless (JL) triple-
gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity …

A new model to capture the physics of short channel double-gate junctionless transistor
(DGJT) has been developed. By solving the 2-D Poisson's equation, the channel potential …

This paper demonstrates the influence of nonuniform doping on the electrostatics of
symmetric double-gate junctionless transistor using empirical modeling scheme. To present …

Silicon carbide (SiC) double gate junctionless metal oxide semiconductor field-effect
transistors (DG JL MOSFETs) have attracted significant attention due to their ideal high …

In this paper, a SPICE compatible analytical surface-potential-based model for junctionless
symmetric double-gate (JLDG) MOSFETs is described. By using the gradual-channel …

An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold
region is proposed in this paper. As the analytical models based on Young's approximation …