High-K materials and metal gates for CMOS applications
J Robertson, RM Wallace - Materials Science and Engineering: R: Reports, 2015 - Elsevier
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high …
H Ma, O Acton, DO Hutchins, N Cernetic… - Physical Chemistry …, 2012 - pubs.rsc.org
Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers
(SAMs) have been developed for applications in organic field-effect transistors (OFETs) for …
(SAMs) have been developed for applications in organic field-effect transistors (OFETs) for …
π‐σ‐Phosphonic Acid Organic Monolayer/Sol–Gel Hafnium Oxide Hybrid Dielectrics for Low‐Voltage Organic Transistors
Abstract Anthryl‐alkyl‐PA (π‐σ‐PA) self‐assembled monolayers (SAMs)/hafnium oxide (HfO
2) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to …
2) hybrid dielectrics have been integrated into organic thin film transistors (OTFTs) to …
Low-voltage organic field-effect transistors (OFETs) with solution-processed metal-oxide as gate dielectric
In this study, low-voltage copper phthalocyanine (CuPc)-based organic field-effect
transistors (OFETs) are demonstrated utilizing solution-processed bilayer high-k metal-oxide …
transistors (OFETs) are demonstrated utilizing solution-processed bilayer high-k metal-oxide …
Interfacial and structural properties of sputtered HfO2 layers
G Aygun, I Yildiz - Journal of Applied Physics, 2009 - pubs.aip.org
Magnetron sputtered HfO2 layers formed on a heated Si substrate were studied by
spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR) …
spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR) …
Study on the Formation of Self-Assembled Monolayers on Sol− Gel Processed Hafnium Oxide as Dielectric Layers
High dielectric constant (k) metal oxides such as hafnium oxide (HfO2) have gained
significant interest due to their applications in microelectronics. In order to study and control …
significant interest due to their applications in microelectronics. In order to study and control …
Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress
XH Zhang, SP Tiwari, SJ Kim, B Kippelen - Applied Physics Letters, 2009 - pubs.aip.org
Low-voltage pentacene organic field-effect transistors are demonstrated (operating voltage
of− 3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at …
of− 3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at …
Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering
L Khomenkova, X Portier, J Cardin… - Nanotechnology, 2010 - iopscience.iop.org
The microstructure and optical properties of HfSiO films fabricated by RF magnetron
sputtering were studied by means of x-ray diffraction, transmission electron microscopy …
sputtering were studied by means of x-ray diffraction, transmission electron microscopy …
High performance low-voltage organic field-effect transistors enabled by solution processed alumina and polymer bilayer dielectrics
High performance low-voltage pentacene-based organic field-effect transistors (OFETs) are
fabricated utilizing solution-processed alumina (Al 2 O 3) as high-k gate dielectric, and the …
fabricated utilizing solution-processed alumina (Al 2 O 3) as high-k gate dielectric, and the …
Low-temperature solution-based fabrication of high-k HfO2 dielectric thin films via combustion process
J Weng, W Chen, W Xia, J Zhang, Y Jiang… - Journal of Sol-Gel Science …, 2017 - Springer
HfO 2 dielectric is one potential material in advanced microelectronics. Its solution-based
fabrication usually requires high annealing temperature to remove residual organic solvent …
fabrication usually requires high annealing temperature to remove residual organic solvent …