The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

Atomic layer deposition (ALD) is a popular deposition technique comprising two or more
sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced …

The chlorine evolution mechanism remains unclear during the thermal treatment of CaCl
2/Ca (OH) Cl-containing solid waste. In this paper, we have conducted both experimental …

Area-selective atomic layer deposition using small-molecule inhibitors (SMIs) involves vapor-
phase dosing of inhibitor molecules, resulting in an industry-compatible approach. However …

Room‐temperature atomic layer deposition (RT‐ALD) processes are of interest for
applications using temperature‐sensitive substrates. Challenges with RT‐ALD arise when …

An effective precursor is a prerequisite and key to the success of atomic layer deposition
(ALD). Currently, the design of more effective precursors is an important aspect of the …

In the present study, SiO 2 was deposited using the atomic layer deposition (ALD) with a 1, 2-
bis (diisopropylamino) disilane (BDIPADS) precursor. The use of this precursor exhibited a …

An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD)
process for SiO2 using bisdiethylaminosilane (BDEAS, SiH2 [NEt2] 2) and O2 plasma is …

We investigated the effect of deposition temperature on the properties of the silicon oxide
films produced by alternating exposures to bis (diethylamino) silane (BDEAS) and ozone (O …

Atomic layer deposition (ALD) is a powerful nanofabrication technique for the preparation of
uniform, conformal, and ultrathin films and allows accurate control of the composition and …