In Situ Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes
GT Nelson, G Ouin, SJ Polly, KB Wynne… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
In0. 53Ga0. 47As photodiodes were irradiated by 2.0-and 3.5-MeV protons at low
temperature to study the effects of displacement damage. Defect spectroscopy and dark …
temperature to study the effects of displacement damage. Defect spectroscopy and dark …
Ultra-high voltage electron microscopy investigation of irradiation induced displacement defects on AlGaN/GaN HEMTs
H Sasaki, T Hisaka, K Kadoiwa, T Oku, S Onoda… - Microelectronics …, 2018 - Elsevier
Irradiation effects produced by high energy heavy ions and electrons on AlGaN/GaN high
electron mobility transistor (HEMT) were investigated using ultra-high voltage electron …
electron mobility transistor (HEMT) were investigated using ultra-high voltage electron …
[图书][B] Native and radiation-induced defects in III-V solar cells and photodiodes
GT Nelson IV - 2019 - search.proquest.com
Photodiodes made of III-V materials are ubiquitous with applications for telecommunications,
photonics, consumer electronics, and spectroscopy. The III-V solar cell, specifically, is a …
photonics, consumer electronics, and spectroscopy. The III-V solar cell, specifically, is a …
The role of defects on the performance of quantum dot intermediate band solar cells
Electrically active defects present in three InAs/GaAs quantum dots (QDs) intermediate band
solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices' …
solar cells grown by metalorganic vapor phase epitaxy have been investigated. The devices' …
Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence
Nonradiative recombination (NRR) centers in as-grown and proton-irradiated InAs/GaAs
quantum dot (QD) structures have been studied by two-wavelength-excited …
quantum dot (QD) structures have been studied by two-wavelength-excited …
[图书][B] Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells
A Maros - 2017 - search.proquest.com
III-V multijunction solar cells have demonstrated record efficiencies with the best device
currently at 46% under concentration. Dilute nitride materials such as GaInNAsSb have …
currently at 46% under concentration. Dilute nitride materials such as GaInNAsSb have …
[PDF][PDF] Investigation of the electrical and optical properties of advanced semiconductors materials and devices
M Al Huwayz - 2022 - core.ac.uk
This thesis reports on an investigation of deep level defects in InAs quantum dots
intermediate band solar cells (QD-IBSCs) and InAs/InGaAs quantum dot lasers structures …
intermediate band solar cells (QD-IBSCs) and InAs/InGaAs quantum dot lasers structures …
Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy
SI Sato, T Sugaya, T Nakamura… - 2017 IEEE 44th …, 2017 - ieeexplore.ieee.org
Radiation degradation characterization method for solar cells embedded with quantum dot
(QD) layers using Photo-Induced Current Transient Spectroscopy (PICTS) is proposed in …
(QD) layers using Photo-Induced Current Transient Spectroscopy (PICTS) is proposed in …
Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence
Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot
(QD) structure generated by 3 MeV proton irradiation is performed by two wavelength …
(QD) structure generated by 3 MeV proton irradiation is performed by two wavelength …
III-V 族量子ドットデバイスの欠陥評価宇宙用多接合太陽電池の耐放射線性強化のために
佐藤真一郎 - 応用物理, 2017 - jstage.jst.go.jp
抄録 InGaP トップ層, GaAs ミドル層, Ge ボトム層からなる宇宙用 3 接合太陽電池の耐放射線性を
強化するために, GaAs ミドル層に InAs 量子ドット層 (QD) を導入するというアイデアが提案されて …
強化するために, GaAs ミドル層に InAs 量子ドット層 (QD) を導入するというアイデアが提案されて …