An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched …
A Kranti, S Haldar, RS Gupta - Solid-State Electronics, 2002 - Elsevier
The present paper proposes an improved charge control model of lattice-mismatched
AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two …
AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two …
2‐D analytical model for current–voltage characteristics and output conductance of AlGaN/GaN MODFET
Rashmi, S Haldar, RS Gupta - Microwave and Optical …, 2001 - Wiley Online Library
A two‐dimensional analytical model for an AlGaN/GaN MODFET is presented. The model
assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and …
assumes the velocity saturation of electrons in 2‐DEG, which causes current saturation and …
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility …
In this paper, the authors present a polarisation dependent analytical model for DC, radio
frequency (RF) and linearity characteristics of a proposed lattice‐matched AlInN/AlN/GaN …
frequency (RF) and linearity characteristics of a proposed lattice‐matched AlInN/AlN/GaN …
Capacitance–voltage characteristics and cutoff frequency of pseudomorphic (AlGaAs/InGaAs) modulation‐doped field‐effect transistor for microwave and high‐speed …
A two‐dimensional analytical model for the capacitance–voltage characteristics of a
pseudomorphic AlGaAs/InGaAs modulation‐doped field‐effect transistor is developed using …
pseudomorphic AlGaAs/InGaAs modulation‐doped field‐effect transistor is developed using …
Comprehensive Analysis of S-Parameters of 2-D MODFET for Microwave Applications
R Kumar - Wireless Communication with Artificial Intelligence, 2022 - taylorfrancis.com
This paper presents a comprehensive analytical study of an AlGaN/GaN MODFET for the
evaluation of scattering parameters including the important figure of merits like trans …
evaluation of scattering parameters including the important figure of merits like trans …
A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency
Extrinsic lattice matched InAlAs/InGaAs/InP HEMT model, incorporating the parasitic source
and drain resistance, for very high frequency application is developed. The current voltage …
and drain resistance, for very high frequency application is developed. The current voltage …
12 Comprehensive Analysis
R Kumar - … with Artificial Intelligence: Emerging Trends and …, 2022 - books.google.com
AlGaN/GaN Pseudomorphic High Electron Mobility Transistors (pHEMTs) are very large
common microwave devices due to its several merits like high voltage, high power, large …
common microwave devices due to its several merits like high voltage, high power, large …
Frequency optimization of pseudomorphic modulation‐doped field‐effect transistor (AlGaAs/InGaAs) for microwave and millimeter‐wave applications
A Agrawal, A Goswami… - Microwave and Optical …, 2000 - Wiley Online Library
The results of an analysis based on the solution of the 2‐D Poisson equation are presented
to investigate the dependence of the small‐signal parameters on biasing conditions. The …
to investigate the dependence of the small‐signal parameters on biasing conditions. The …
An Analytical Two-Dimensional CV Model of AlGaN/GaN MODFET for High Speed Circuit Applications.
In the present paper, a two-dimensional analytical model is developed for the Capacitance-
Voltage (CV) characteristics of a pseudomorphic AlGaN/GaN HEMTfor high speed circuit …
Voltage (CV) characteristics of a pseudomorphic AlGaN/GaN HEMTfor high speed circuit …
Current–voltage characteristics and field distribution of pseudomorphic (AlGaAs/InGaAs) modulation‐doped field‐effect transistor for microwave circuit applications
A two‐dimensional analytical model for the current–voltage characteristics of a
pseudomorphic AlGaAs/InGaAs modulation‐doped field‐effect transistor is developed using …
pseudomorphic AlGaAs/InGaAs modulation‐doped field‐effect transistor is developed using …