Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–
semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron …

Overcurrent protection of silicon carbide (SiC) metal–oxide–semiconductor field-effect
transistors (MOSFETs) remains a challenge due to lack of practical knowledge. This paper …

Silicon-Carbide (SiC) MOSFETs, due to material properties, are designed with smaller
thickness in the gate oxide and a higher electric field compared to Si MOSFETs …

An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …

The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for
applications where high temperature is required. The metal-oxide-semiconductor (MOS) …

Nitridation of the SiO 2/SiC interface yields a reduction in interface state density, immunity to
electron injection, as well as increased hole trapping. It is shown that the accumulation of …

This paper presents a comprehensive study on degradation monitoring of silicon carbide
mosfets and proposes an early warning method to detect aging. The proposed plug-in tool …

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years
in many research fields, such as power electronics, high operation temperature circuits …