Effect of Dual Metal on RF/Analog and Linearity Performance of Double Gate Ferroelectric...

Impact of capacitance and linearity on the reliability of InGaN notch based dual channel GaN MOSHEMTs for precision biosensing

GS Mishra, N Mohankumar, MA Kumar… - Microsystem …, 2024 - Springer
In this proposed work, the effect of capacitance and linearity were extensively analyzed on
the performance of dual-channel (DC) AlGaN/GaN MOSHEMTs for improved sensitivity and …
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Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

GS Mishra, N Mohankumar… - Engineering Research …, 2024 - iopscience.iop.org
This paper focuses on the impact of gate-engineered dielectric-modulated GaN MOSHEMT
with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this …
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CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing

GS Mishra, N Mohankumar, SK Singh… - … of Electron Devices …, 2022 - ieeexplore.ieee.org
In this paper, we have demonstrated the effect of InGaN notch on device reliability, including
CV analysis and linearity analysis of an AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
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