Accurately measuring and controlling the electrical properties of semiconductor nanowires is
of paramount importance in the development of novel nanowire-based devices. In light of …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

In a classical light source, such as a laser, the photon number follows a Poissonian
distribution. For quantum information processing and metrology applications, a non-classical …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar
cells are a good option to harvest this energy. However, it is difficult to balance the cost and …

We experimentally investigate whether crystal polarity affects the growth of GaN nanowires
in plasma-assisted molecular beam epitaxy and whether their formation has to be induced …

We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux
during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth …

GaN nanowires, also called nanocolumns, have emerged over the last decade as promising
nanosized building blocks for a wide variety of optoelectronic devices. In contrast to other III …