In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

The remote sensing and satellite community working for space organizations have
expressed interest in building advanced devices with potential choices for Gallium Nitride …

This book focuses on reliability and radiation effects in compound semiconductors, which
have evolved rapidly during the last 15 years. It starts with first principles, and shows how …

In this article, we mainly studied the proton irradiation effects on novel dual delta-doping
GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The conventional …

The effect of fast neutron radiation has been investigated in High Electron Mobility
Transistors (HEMT's). Devices with different layer structures have been employed for the …

This paper discusses the electrical properties of complementary GaAs heterojunction FETs
and of amplifiers based on these devices before and after irradiation with neutrons for a total …

The high electron mobility of GaAs and related III–V compounds renders these materials
very suitable for high-speed digital and microwave/millimeter wave applications. The …

GaAs heterojunction field-effect transistors (HFETs) and inverters and ring oscillators
comprising HFETs have been exposed to neutron fluences of 5* 10/sup 13/n/cm/sup 2/to 1 …

Neutron irradiation effects on the IV characteristics of AlGaAs-GaAs high electron mobility
transistors and AlGaAs-InGaAs heterostructure insulated gate field-effect transistors are …

To study radiation damage, the authors irradiated AlGaN/GaN high-electron-mobility
transistors with 3 MeV protons at various fluences. This irradiation caused displacement …