Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped -Ga2O3 MOSFETs
A Sn-doped (100)-Ga 2 O 3 epitaxial layer was grown via metal–organic vapor phase
epitaxy onto a single-crystal, Mg-doped semi-insulating (100)-Ga 2 O 3 substrate. Ga 2 O 3 …
epitaxy onto a single-crystal, Mg-doped semi-insulating (100)-Ga 2 O 3 substrate. Ga 2 O 3 …
[HTML][HTML] Structural and electronic properties of Ga2O3-Al2O3 alloys
Ga 2 O 3 is emerging as an important electronic material. Alloying with Al 2 O 3 is a viable
method to achieve carrier confinement, to increase the bandgap, or to modify the lattice …
method to achieve carrier confinement, to increase the bandgap, or to modify the lattice …
[HTML][HTML] Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Sn-doped gallium oxide (Ga 2 O 3) wrap-gate fin-array field-effect transistors (finFETs) were
formed by top-down BCl 3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga …
formed by top-down BCl 3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
Lateral β-Ga2O3 field effect transistors
Abstract Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
MH Wong, Y Nakata, A Kuramata… - Applied Physics …, 2017 - iopscience.iop.org
Enhancement-mode β-Ga 2 O 3 metal–oxide–semiconductor field-effect transistors with low
series resistance were achieved by Si-ion implantation doping of the source/drain contacts …
series resistance were achieved by Si-ion implantation doping of the source/drain contacts …
Delta-doped β-gallium oxide field-effect transistor
We report silicon delta doping in gallium oxide (β-Ga 2 O 3) grown by plasma-assisted
molecular beam epitaxy using a shutter pulsing technique. We describe the growth …
molecular beam epitaxy using a shutter pulsing technique. We describe the growth …
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD
The valence and conduction band offsets at (100) β-(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …
[HTML][HTML] Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2¯ 01)
The energy band alignment between atomic layer deposited (ALD) SiO 2 and β-Ga 2 O 3 (
2 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of …
2 01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of …