The present inventors devised unique atomic-layer deposi tion systems, methods, and
apparatus Suitable for aluminum oxide deposition. One exemplary method entails providing …

US7369435B2 - Write once read only memory employing floating gates - Google Patents
US7369435B2 - Write once read only memory employing floating gates - Google Patents Write …

Fuyuki, Takashi, et al.,“Initial stage of ultra-thin SiO2 formation at low temperatures using
activated oxygen'. Applied Surface Science,(1997), pp. 123-126. Gartner, M." …

(57) ABSTRACT A gate oxide and method of fabricating a gate oxide that produces a more
reliable and thinner equivalent oxide thick ness than conventional SiO2 gate oxides are …

440 elements such as Zirconium are thermodynamically stable such that the gate oxides
formed Will have minimal reactions With a silicon substrate or other structures during any …

6,093.944 A 7/2000 VanDover......... 257/310 Hubbard, KJ, et al s Thermodynamic stability of
binary 6,110,529 A 8/2000 Gardiner et al.... 427/250 oxides in contact with silicon', J. Mater …

Structures, systems and methods for transistors utilizing oxide nanolaminates are provided.
One transistor embodiment includes a first source/drain region, a second source/drain …

A gate oxide and method of fabricating a gate oxide that produces a more reliable and
thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Also …

(51) Int. Cl. formed will have minimal reactions with a silicon substrate HOIL 29/78(2006.01)
or other structures during any later high temperature pro (52) US Cl …

(58) Field of Search................................. 365/149, 177; Structures and methods for write once
read only memory 257/300 employing charge trapping are provided. The write once read …