Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing
Abstract Changes of the defect structure of silicon p-type crystal surface layer under the
influence of plastic deformation and high temperature annealing in oxygen atmosphere …
influence of plastic deformation and high temperature annealing in oxygen atmosphere …
Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers
The effect of a weak magnetic field (B= 0.17 T) and X-irradiation (D< 520 Gy) on the
rearrangement of the defective structure of near-surface p-type silicon layers was studied. It …
rearrangement of the defective structure of near-surface p-type silicon layers was studied. It …
[PDF][PDF] Перебудова дефектної структури та центрів дислокаційної люмінесценції у приповерхневих шарах p-Si
БВ Павлик, МО Кушлик, ДП Слободзян… - Журнал фізичних …, 2017 - irbis-nbuv.gov.ua
Методом ємнiсно-модуляцiйної спектроскопiї глибоких рiвнiв, IЧ-спектроскопiї коливних
рiвнiв молекул та атомiв дослiджено змiни дефектної структури приповерхневого шару …
рiвнiв молекул та атомiв дослiджено змiни дефектної структури приповерхневого шару …
The Role of a Thin Aluminum Film in the Reconstruction of Silicon's Near-Surface Layers
The effect of a thin film of aluminum on morphology and change in the characteristics of p-
type silicon crystals was investigated in the work. It is established that a sprayed metallic film …
type silicon crystals was investigated in the work. It is established that a sprayed metallic film …
Electroluminescence energy efficiency of Si-structures with different compound of nanoscale dislocation complexes
Abstract Changes in the defect structure and luminescence properties of silicon p-type
crystals surface layer under the influence of plastic deformation and high temperature …
crystals surface layer under the influence of plastic deformation and high temperature …