In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

One of the modern methods for modifying semiconductors using beams of protons and
alpha particles is analyzed; this modification is accomplished by the controlled introduction …

Выполнен анализ одного из современных направлений модифицирования
полупроводников пучками протонов и α-частиц, осуществляемого путем …

A new electrodeposition route was developed to prepare p-type CuFeO2 as a thin film-type
electrode for use as a photocathode in a solar water splitting cell. The resulting p-CuFeO2 …

We describe information which has been obtained on point defects detected in various types
of GaAs materials using electron paramagnetic resonance as well as electrical and optical …

We present here a complete set of experimental results, obtained by electron paramagnetic
resonance (EPR) and deep-level transient spectroscopy (DLTS), on the so-called EL2 defect …

The electronic properties of self-organized GaSb quantum dots (QDs) embedded in GaAs n+
p diodes were investigated by capacitance–voltage and deep level transient spectroscopy …

In GaAs, electron irradiation is known to produce vacancy-interstitial pairs in the arsenic
sublattice (V As− As i). The associated levels are electron traps (labeled E1–E5), and hole …

Although the defects introduced by irradiation in Si and GaAs have been extensively
studied, the centres giving rise to non-radiative recombination have been neither …

Many bottom-up and top-down techniques for nanomaterial and nanostructure generation
have enabled the development of applications in nanoelectronics and nanophotonics …