Defects play a pivotal role in limiting the performance and reliability of nanoscale devices.
Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) …

A key concern for resistive-switching random access memory (RRAM) is the read noise, due
to the structural, chemical, and electrical modifications taking place at the localized current …

To analyze the reliability of semiconductor transistors, changes in the performance of the
devices during operation are evaluated. A prominent effect altering the device behavior are …

Methods for evaluating low-frequency noise, such as 1/f noise and random telegraph noise,
and evaluation results are described. Variability and fluctuation are critical in miniaturized …

Time-fluctuating signals are ubiquitous and diverse in many physical, chemical, and
biological systems, among which random telegraph signals (RTSs) refer to a series of …

A new method for the characterization of random telegraph signals (RTSs) is presented. The
method, which is based on the time lag plot, is illustrated using Monte Carlo generated RTS …

Resistance switching devices are of special importance because of their application in
resistive memories (RRAM) which are promising candidates for replacing current nonvolatile …

It is commonly accepted that the performance and time-to-failure of modern semiconductor
transistors are seriously affected by single defects located in the insulator or at the insulator …

As the generally-accepted simple understanding, the random telegraph noise (RTN)
induced by a single trap is explained by the “normal” two-state trap model, and the RTNs …

An on-chip variability characterization system implemented in a 45-nm CMOS process is
used for direct time-domain measurements of random telegraph noise (RTN) in small-area …