Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

The realisation of photonic devices for different energy ranges demands materials with
different bandgaps, sometimes even within the same device. The optimal solution in terms of …

The bottom-up fabrication of regular nanowire (NW) arrays on a masked substrate is
technologically relevant, but the growth dynamic is rather complex due to the superposition …

Liquid Ga droplets play a double role in the self-catalyzed growth of GaAs nanowires on Si
(111) substrates covered with a native SiO x layer: they induce the formation of nanosized …

We present two models of the vapor–liquid–solid growth of nanowires of alloyed compound
semiconductors. These models are tested against experiments on axial heterostructures in …

The control of the crystal phase in self-catalyzed nanowires (NWs) is one of the central
remaining open challenges in the research field of III/V semiconductor NWs. While several …

As semiconductor devices approach dimensions at the atomic scale, controlling the
compositional grading across heterointerfaces becomes paramount. Particularly in nanowire …

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been
highly debated in the last few years. Here, we report on the use of indium droplets to tune …

The growth of regular arrays of uniform III–V semiconductor nanowires is a crucial step on
the route toward their application-relevant large-scale integration onto the Si platform. To …

We report on a growth study of self-catalyzed GaAs nanowires based on time-resolved in
situ X-ray structure characterization during molecular-beam-epitaxy in combination with ex …