[HTML][HTML] From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
In this review the effect of the growth process on the formation of defects in the hetero-
epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our …
epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our …
New approaches and understandings in the growth of cubic silicon carbide
In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
Emerging SiC applications beyond power electronic devices
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been
proposed in different papers. In this review, several of these emerging applications have …
proposed in different papers. In this review, several of these emerging applications have …
Overview of residual stress in MEMS structures: Its origin, measurement, and control
Micro-electro-mechanical system (MEMS) technology has radically changed the scale,
performance, and cost of a wide variety of sensors and actuators by taking advantage of …
performance, and cost of a wide variety of sensors and actuators by taking advantage of …
Recent advances in brazing fillers for joining of dissimilar materials
B Ahn - Metals, 2021 - mdpi.com
Brazing fillers for joining applications are essential for manufacturing and designing
advanced materials. Several types of brazing fillers have been developed in recent decades …
advanced materials. Several types of brazing fillers have been developed in recent decades …
Reliability of MEMS: A perspective on failure mechanisms, improvement solutions and best practices at development level
J Iannacci - Displays, 2015 - Elsevier
Abstract Reliability of MEMS (MicroElectroMechanical-Systems) devices is a crucial aspect
as it can discriminate the successful from partially or totally missed reaching of Microsystem …
as it can discriminate the successful from partially or totally missed reaching of Microsystem …
Effect of ion implantation on material removal mechanism of 6H-SiC in nano-cutting: A molecular dynamics study
B Liu, Z Xu, Y Wang, X Gao, R Kong - Computational Materials Science, 2020 - Elsevier
Silicon carbide (SiC) is being increasingly applied in several engineering fields owing to its
excellent mechanical and electrical properties. Although much attention has been paid to …
excellent mechanical and electrical properties. Although much attention has been paid to …
Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear
determined by their growth orientation. Stress evaluation locally with Raman spectroscopy …
determined by their growth orientation. Stress evaluation locally with Raman spectroscopy …
Engineering the dissipation of crystalline micromechanical resonators
High-quality micro-and nanomechanical resonators are widely used in sensing,
communications, and timing, and have future applications in quantum technologies and …
communications, and timing, and have future applications in quantum technologies and …