Status and prospects of ZnO-based resistive switching memory devices
In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …
alternative than the other metal oxides for its versatility and huge applications in different …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
The implementation of memristive synapses in neuromorphic computing is hindered by the
limited reproducibility and high energy consumption of the switching behaviour of the …
limited reproducibility and high energy consumption of the switching behaviour of the …
Hardware implementation of neuromorphic computing using large‐scale memristor crossbar arrays
Y Li, KW Ang - Advanced Intelligent Systems, 2021 - Wiley Online Library
Brain‐inspired neuromorphic computing is a new paradigm that holds great potential to
overcome the intrinsic energy and speed issues of traditional von Neumann based …
overcome the intrinsic energy and speed issues of traditional von Neumann based …
[PDF][PDF] Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM
The efforts to find alternative approaches to replace conventional charge-based nonvolatile
memories (NVM) is one of the most attractive topics for satisfying the requirements of …
memories (NVM) is one of the most attractive topics for satisfying the requirements of …
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
Biodegradable natural pectin‐based flexible multilevel resistive switching memory for transient electronics
J Xu, X Zhao, Z Wang, H Xu, J Hu, J Ma, Y Liu - Small, 2019 - Wiley Online Library
Transient electronics that can physically vanish in solution can offer opportunities to address
the ecological challenges for dealing with the rapidly growing electronic waste. As one …
the ecological challenges for dealing with the rapidly growing electronic waste. As one …
Ultrasensitive memristive synapses based on lightly oxidized sulfide films
For biological synapses, high sensitivity is crucial for transmitting information quickly and
accurately. Compared to biological synapses, memristive ones show a much lower …
accurately. Compared to biological synapses, memristive ones show a much lower …
The strategies of filament control for improving the resistive switching performance
With the rapid application of artificial intelligence in daily life and work, the traditional von
Neumann architecture device faces the limitation of scalability and high energy …
Neumann architecture device faces the limitation of scalability and high energy …
Improvement of the performance in Cr-doped ZnO memory devices via control of oxygen defects
SS Li, YK Su - RSC advances, 2019 - pubs.rsc.org
The defect-enhanced resistive switching behavior of Cr-doped ZnO films was investigated in
this study, and evidence that the switching effect can be attributed to defects was found. X …
this study, and evidence that the switching effect can be attributed to defects was found. X …