The evolution of next-generation cellular networks is aimed at creating faster, more reliable
solutions. Both the next-generation 6G network and the metaverse require high transmission …

The typical Haber technical process for industrial NH 3 production involves plenty of energy-
consumption and large quantities of greenhouse gas emission. In contrast, electrochemical …

A vertical integration of indium gallium nitride/gallium nitride (InGaN/GaN)-based microlight-
emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor …

The micro-light emitting diode (µLED) technology is poised to revolutionise display
applications through the introduction of nanomaterials and Group III-nitride nanostructures …

This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-
chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction …

Microscale light-emitting diodes (µLEDs) have attracted considerable attention as next-
generation solid-state lighting sources owing to their reliable performance and attractive …

This work investigates the size-dependent decrease in external quantum efficiency (EQE) of
various InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diodes (μ …

In this study, we investigated the temperature dependence of the initial deformation and
cracks of indium tin oxide (ITO) thin films deposited on a fused silica substrate using a 1064 …

Wide band gap (WBG) materials are an interesting class of semiconductors that offer a key
criterion to the modern technological applications in terms of their high efficiency, high …

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-
emitting (USE) light-emitting diode (LED) and describes the sidewall light emission …