Theoretical models for doping diamond for semiconductor applications

JP Goss, RJ Eyre, PR Briddon - physica status solidi (b), 2008 - Wiley Online Library
Diamond is a material with superlative properties in terms of carrier mobilities and device
characteristics for high power electronics applications. Although p‐type diamond is routinely …

Vacancy-impurity complexes and limitations for implantation doping of diamond

JP Goss, PR Briddon, MJ Rayson, SJ Sque… - Physical Review B …, 2005 - APS
Many candidates have been proposed as shallow donors in diamond, but the small lattice
constant means that many substitutional impurities generate large strains and thus yield low …

Diamond—the ultimate material for exploring physics of spin-defects for quantum technologies and diamondtronics

D Das, R Raj, J Jana, S Chatterjee… - Journal of Physics D …, 2022 - iopscience.iop.org
Diamond due to its outstanding optical, electrical, mechanical and thermal properties finds
an important place in electronic, opto-electronic and quantum technologies. Recent …

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

F Picollo, DG Monticone, P Olivero… - New Journal of …, 2012 - iopscience.iop.org
We report on the systematic characterization of conductive micro-channels fabricated in
single-crystal diamond with direct ion microbeam writing. Focused high-energy (∼ MeV) …

Electrical properties and conduction mechanisms of heavily B+-ion-implanted type IIa diamond: effects of temperatures during the ion implantation and postannealing …

Y Seki, Y Hoshino, J Nakata - Japanese Journal of Applied …, 2020 - iopscience.iop.org
We investigated the electrical properties and conduction mechanism of heavily B+-
implanted type IIa diamond with respect to the implantation and postannealing …

Conductive layers in diamond formed by hydrogen ion implantation and annealing

VP Popov, LN Safronov, OV Naumova… - Nuclear Instruments and …, 2012 - Elsevier
High conductivity is extremely difficult to obtain in diamond due to its wide band gap and low
solubility of dopands. The goal of the investigation was to form a conductor inside HPHT …

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization

P Olivero, G Amato, F Bellotti, O Budnyk… - Diamond and related …, 2009 - Elsevier
We report on a novel method for the fabrication of three-dimensional buried graphitic
micropaths in single crystal diamond with the employment of focused MeV ions. The use of …

IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector

J Forneris, V Grilj, M Jakšić, AL Giudice… - Nuclear Instruments and …, 2013 - Elsevier
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic
regions in monocrystalline diamond with micrometric resolution. As part of the development …

Ab initio study of lithium and sodium in diamond

EB Lombardi, A Mainwood, K Osuch - Physical Review B—Condensed Matter …, 2007 - APS
Interstitial lithium and sodium have been suggested as alternatives to phosphorus to
achieve shallow n-type doping of diamond. Experimental results have, however, been …

Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond

JM Baker, JA Van Wyk, JP Goss, PR Briddon - Physical Review B …, 2008 - APS
In natural diamonds a sulfur-related paramagnetic center labeled W31 has been previously
tentatively assigned to an interstitial sulfur species in a positive charge state. However, we …