The secondary electron emission yield in Al2O3 and polymethylmethacrylate (PMMA) is
calculated using two different Monte Carlo approaches, one based on the energy straggling …

We demonstrate that energy selective scanning electron microscopy can lead to substantial
dopant contrast and resolution improvements (compared to standard SEM) when the energy …

This work describes a Monte Carlo algorithm which appropriately takes into account the
stochastic behavior of electron transport in solids and the simulation of the energy …

Images of Ga+‐implanted amorphous silicon layers in a 110 n‐type silicon substrate have
been collected by a range of detectors in a scanning electron microscope and a helium ion …

As the miniaturization of semiconductor devices continues, characterization of dopant
distribution within the structures becomes increasingly challenging. One potential solution is …

Despite decades of research, the technique of measuring dopant concentration by the
scanning electron microscope (SEM) has so far been limited to probing idealized test pn …

Dopant contrast in the scanning electron microscope (SEM) has the potential to provide
rapid and quantitative information about the distribution of dopant atoms in semiconductors …

Monte Carlo (MC) technique allows solving mathematical and physical problems of great
complexity. One of the main topics that can be approached using the MC strategies …

The reproducibility of contrast in secondary electron (SE) imaging during continuous
electron irradiation, which caused surface contamination, was investigated using SE high …

With the continued miniaturisation of semiconductor devices, there is an increasing need for
nanoscale characterisation. Dopant mapping in a Low Voltage Scanning Electron …