Thermal emission of current carriers from defects in semiconductors has been used as a
characterization technique for over 50 years. One of the most significant early publications …

This review covers a spectrum of optoelectronic properties of and uses for semi-insulating
semiconductor heterostructures and thin films, including epilayers and quantum wells …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Semiconductor heterojunctions and superlattices have recently shown tremendous potential
for device applications because of their flexibility for tailoring the electronic band structure. A …

The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …

We have studied systematically the chemical trends of the band-gap pressure coefficients of
all group IV, III-V, and II-VI semiconductors using first-principles band-structure method. We …

The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an
eight-band strain-dependent k⋅ p Hamiltonian. The influence of strain on band energies …

Doping limits in semiconductors are discussed in terms of the amphoteric defect model
(ADM). It is shown that the maximum free electron or hole concentration that can be …

In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …

Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …