The major barrier for PV penetration is cost. And the single most important cost factor in
silicon technology is the wafer (≈ 35% of the module cost). Although tremendous progress …

(57) ABSTRACT A polycrystalline silicon producing method with preventing meltdown and
maintaining a high growing rate and a high yield by increasing temperature of raw material …

The linear electric molten zone produced by passing an electric current in a silicon ribbon
may be used to create a floating molten zone specially suited for a recrystallization process …

An electric current is used to create and maintain a linear molten zone in silicon. The
electrical signature of the electric molten zone (EMZ) is described in detail. The …

The degradation of minority lifetime of mono-and multi-crystalline silicon wafers after electric
zone melting, a simple and contamination-free process, was investigated. The thermal …

A new method for molten zone crystallization is presented. The method is based on the
formation of a molten capillary by applying an electric current. Since the power is delivered …

Nesta tese descreve-se o desenvolvimento de um novo método de dopagem de silício com
boro, para aplicações fotovoltaicas. Este novo método de dopagem em volume baseia-se …

This article describes a process for generating and controlling a closed molten zone with an
induced electrical current, and using it for silicon ribbon tube recrystallization. The silicon …

The major barrier for PV penetration is cost. And the most important cost factor in silicon
technology is the wafer (50% of the module cost). Although tremendous progress on cell …

A new method to dope silicon ribbons with phosphorous is presented. The method is based
on the spraying of the samples with a phosphoric acid (H3PO4) solution and a …