AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism
J Dzuba, G Vanko, M Držík, I Rýger, V Kutiš… - Applied Physics …, 2015 - pubs.aip.org
The piezoelectric response of AlGaN/GaN circular HEMT pressure sensing device
integrated on AlGaN/GaN diaphragm was experimentally investigated and supported by the …
integrated on AlGaN/GaN diaphragm was experimentally investigated and supported by the …
Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device
T Lalinský, P Hudek, G Vanko, J Dzuba, V Kutiš… - Microelectronic …, 2012 - Elsevier
A new design concept of pressure sensors based on circular high electron mobility transistor
(C-HEMT) sensing devices integrated on circular, ring and/or sequential ring AlGaN/GaN …
(C-HEMT) sensing devices integrated on circular, ring and/or sequential ring AlGaN/GaN …
Low power AlGaN/GaN MEMS pressure sensor for high vacuum application
A micro-scale pressure sensor based on suspended AlGaN/GaN heterostructure is reported
with non-linear sensitivity. By sealing the cavity, vacuum sensing at various temperatures …
with non-linear sensitivity. By sealing the cavity, vacuum sensing at various temperatures …
MEMS piezoelectric pressure sensor-modelling and simulation
The paper examines the modeling and simulation of piezoelectric MEMS pressure sensor
which is AlGaN/GaN based circular high electron mobility transistor (C-HEMT) structure. The …
which is AlGaN/GaN based circular high electron mobility transistor (C-HEMT) structure. The …
Selective area deposition of diamond films on AlGaN/GaN heterostructures
T Izak, O Babchenko, V Jirásek, G Vanko… - … status solidi (b), 2014 - Wiley Online Library
Diamond‐on‐GaN heterostructure is a promising hybrid material system with a variety of
applications such as heat spreaders, high‐temperature, and high‐power devices. From a …
applications such as heat spreaders, high‐temperature, and high‐power devices. From a …
AlGaN/GaN C-HEMT structures for dynamic stress detection
G Vanko, M Držík, M Vallo, T Lalinský, V Kutiš… - Sensors and Actuators A …, 2011 - Elsevier
In our work, we investigated the possibility of dynamic stress detection based on the
piezoelectric polarization using AlGaN/GaN circular high electron mobility transistors (C …
piezoelectric polarization using AlGaN/GaN circular high electron mobility transistors (C …
Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor
J Dzuba, G Vanko, M Držík, I Rýger… - Journal of …, 2014 - iopscience.iop.org
In this paper, selected mechanical properties of a circular AlGaN/GaN diaphragm with an
integrated circular high electron mobility transistor (HEMT) intended for pressure sensing …
integrated circular high electron mobility transistor (HEMT) intended for pressure sensing …
Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures
T Ižák, V Jirasek, G Vanko, J Dzuba, A Kromka - Materials & Design, 2016 - Elsevier
In this study, we present a complex methodology for evaluation of the thermally induced
stress in patterned diamond microstructures. The diamond strips (2 mm in width and 0.78 or …
stress in patterned diamond microstructures. The diamond strips (2 mm in width and 0.78 or …
Effect of barrier layer thickness on AlGaN/GaN double gate MOS-HEMT device performance for high-frequency application
In this work, we have examined the effect of the AlGaN barrier layer thickness (db) of 0.5 μm
gate length AlGaN/GaN heterostructure double gate (DG) MOS-HEMT device using 2D Atlas …
gate length AlGaN/GaN heterostructure double gate (DG) MOS-HEMT device using 2D Atlas …
Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs
This study investigates and compares AlGaN/GaN high electron mobility transistors (HEMTs)
with three different configurations: an as-fabricated HEMT, a HEMT that uses SiO2 for …
with three different configurations: an as-fabricated HEMT, a HEMT that uses SiO2 for …