This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …

The increasing demand for the higher performance of ultra-large-scale integration (ULSI)
circuits requires the aggressive shrinkage of device feature sizes in accordance with the …

The degradation of porous low-k materials, like SiOCH, under plasma processing continues
to be a problem in the next generation of integrated-circuit fabrication. Due to the exposure …

The increasing demand for higher performance of ULSI circuits requires aggressive
shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays …

Pharmaceutical residues in aquatic environments have the potential to induce bacterial
resistance, subsequently complicating disease treatment and posing a substantial hazard to …

For the manufacturing of mechanically strong and lightweight composite aerostructures
reinforcement materials (eg carbon fibers, CFs) are the most convenient way. Therefore …

Modification of ultra-low-k films by extreme ultraviolet (EUV) and vacuum ultraviolet (VUV)
emission with 13.5, 58.4, 106, 147 and 193 nm wavelengths and fluences up to 6× 10 18 …

The interaction of F atoms with porous SiOCH low-k films at a temperature of~ 14 C is
studied both experimentally and theoretically. Samples of different ultra-low-k SiOCH films …

Damage incurred during plasma processing, leading to increases in dielectric constant k, is
a persistent problem with porous ultra-low-k dielectric films, such as SiCOH. Although most …

The damage induced by CO 2 and O 2 plasmas to an ultra low-k (ULK) dielectric film with a
dielectric constant (κ) of 2.2 was investigated. The dielectric constant was observed to …