Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

This review highlights the development of energy saving transparent heat regulating (THR)
materials and coating for energy saving window applications. Current state-of-the-art …

In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …

Published papers on atomic-scale simulation of the atomic layer deposition (ALD) process
are reviewed. The main topic is reaction mechanism, considering the elementary steps of …

This paper reviews several high‐k ALD processes potentially applicable to the production of
capacitors, concentrating on very recent developments. A list of the dielectric materials …

Rechargeable secondary batteries (RSBs) have been practiced successfully for over one
hundred years and now lithium-ion batteries (LIBs) represent the best-commercialized …

In this work, the authors used density-functional theory methods and x-ray photoelectron
spectroscopy to study the chemical composition and growth rate of HfO 2, Al 2 O 3, and TiO …

The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated
for its unique advantages such as excellent repeatability, conformity, and thickness control at …

The need for the conformal deposition of TiO2 thin films in device fabrication has motivated a
search for thermally robust titania precursors with noncorrosive byproducts. Alkylamido …