In this review paper, we first present an historical perspective of theoretical work and some
early experimental work in the field of dislocations in strained-layer epitaxy. Equilibrium …

After a brief introduction on the phenomena governing the ohmic contact formation and
measurements in metal—semiconductor structures, we present a review of papers on the …

With 26 entirely new and 5 extensively revised chapters out of the total of 39, the Mobile
Communications Handbook, Third Edition presents an in-depth and up-to-date overview of …

We have characterized by transmission electron microscopy (TEM) defect structures in GaN
films grown selectively in hydride vapor-phase epitaxy (HVPE). In this experiment, growth …

The current status and understanding of various degradation phenomena in III-V opto-
electronic devices, especially, GaAs-and InP-based double-heterostructure lasers and light …

Degradation experiments are widely used to assess the reliability of highly reliable products
which are not likely to fail under the traditional life tests. In order to conduct a degradation …

We report characteristics and degradation of an InGaN/AlGaN double-heterostructure light-
emitting diode (LED) grown by metalorganic chemical vapor deposition on a sapphire …

Degradation tests are widely used to assess the reliability of highly reliable products which
are not likely to fail under traditional life tests or accelerated life tests. However, for some …

This paper describes studies on the reliability of semiconductor optical devices over the
course of more than three decades, dating back to the early 1970s. First, a retrospective look …

As a future charge management light source, UV light-emitting diodes (UV LEDs) offer far
superior performance in a range of metrics compared to the mercury lamps used in the past …