A review of selected topics in physics based modeling for tunnel field-effect transistors
The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years,
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
driven by the quest for a new electronic switch operating at a supply voltage well below 1 V …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High Ratio and Steep Swing
In this letter, a novel graded-channel heterojunction tunnel field-effect transistor (GCH-TFET)
is proposed and studied by simulation. The novel TFET adopts a near broken-gap …
is proposed and studied by simulation. The novel TFET adopts a near broken-gap …
Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs
Tunnel field-effect transistors (TFETs) are promising candidates that have demonstrated
potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to …
potential for and beyond the 3 nm technology node. One major challenge for the TFETs is to …
A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications
K Ghosh, VN Mani - Crystal Research and Technology, 2024 - Wiley Online Library
Abstract Ultrapure gallium up to 99.9999%/99.99999%(6N/7N) purity level is a highly
demanding material needed for the growth of gallium‐based group III–V semiconductor …
demanding material needed for the growth of gallium‐based group III–V semiconductor …
[PDF][PDF] The tunnel field-effect transistor
D Verreck, G Groeseneken… - Wiley Encyclopedia of …, 2016 - lirias.kuleuven.be
The tunnel field-effect transistor (TFET) is a semiconductor device aimed at low-power logic
applications that employs band-to-band tunneling (BTBT) as a carrier injection mechanism …
applications that employs band-to-band tunneling (BTBT) as a carrier injection mechanism …
A novel planar architecture for heterojunction TFETs with improved performance and its digital application as an inverter
S Yang, H Lv, B Lu, S Yan, Y Zhang - IEEE Access, 2020 - ieeexplore.ieee.org
A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The
advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and …
advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and …
P-type tunnel FETs with triple heterojunctions
JZ Huang, P Long, M Povolotskyi… - IEEE Journal of the …, 2016 - ieeexplore.ieee.org
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb
heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the …
heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the …
Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides
The trap-assisted tunneling (TAT) current in tunnel field-effect transistors (TFETs) is one of
the crucial factors degrading the sub-60 mV/dec sub-threshold swing. To correctly predict …
the crucial factors degrading the sub-60 mV/dec sub-threshold swing. To correctly predict …
Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors
This paper investigates energy filtering in silicon nanowires and nanosheets by resonant
electron tunneling through a geometric superlattice. A geometric superlattice is any kind of …
electron tunneling through a geometric superlattice. A geometric superlattice is any kind of …