A Novel AC technique for high quality porous GaN
In this paper, we report the formation of porous GaN films under a novel alternating current
(sine-wave ac (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac …
(sine-wave ac (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac …
Structural and optical studies of undoped porous GaN prepared by Pt-assisted electroless etching
Porous GaN structures were formed from crystalline GaN on conducting AL2O3 substrate
using Pt-assisted electroless etching in HF: CH3OH: H2O2= 1: 4: 4 under illumination of 500 …
using Pt-assisted electroless etching in HF: CH3OH: H2O2= 1: 4: 4 under illumination of 500 …
Applications of the image processing method on the structure measurements in porous GaN
A Mahmood, N Mahmoud Ahmed… - Journal of …, 2014 - Taylor & Francis
Porous GaN films on sapphire (0001) prepared by ultraviolet-assisted electrochemical
etching and their quantitative structural characteristics based on mathematical morphology …
etching and their quantitative structural characteristics based on mathematical morphology …
Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
M Ainorkhilah, MA Naser, H Zainuriah… - Advanced Materials …, 2012 - Trans Tech Publ
The structural and optical properties of porous GaN films on sapphire (0001) prepared by
UV assisted electrochemical etching were reported in this study. SEM micrographs indicated …
UV assisted electrochemical etching were reported in this study. SEM micrographs indicated …
Structural and surface studies of undoped porous GaN grown on sapphire
M Ainorkhilah, H Zainuriah, Y Yusof… - Advanced Materials …, 2013 - Trans Tech Publ
Owing to its great potential in optoelectronic devices, structural and surface properties of
porous GaN prepared by UV electrochemical etching has been investigated. Scanning …
porous GaN prepared by UV electrochemical etching has been investigated. Scanning …
The role of alternating current on photo-assisted electrochemical porosification of GaN
A Mahmood, NM Ahmed, I Tiginyanu… - Journal of …, 2014 - ingentaconnect.com
In this paper, we report on formation of porous GaN films under a novel alternating current
photoassisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous …
photoassisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous …
Study of porous GaN dimension for ultra-violet photodetector
In this study, the characterization of porous Gallium Nitrate (PG) for potential Ultra-violet (UV)
light emission was examined by simulation. The simulation was carried out using SILVACO …
light emission was examined by simulation. The simulation was carried out using SILVACO …