Analysis and design of stacked-FET millimeter-wave power amplifiers
Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are
studied with a focus on design of appropriate complex impedances between the transistors …
studied with a focus on design of appropriate complex impedances between the transistors …
A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS
D Zhao, P Reynaert - IEEE Journal of Solid-State Circuits, 2013 - ieeexplore.ieee.org
A 60-GHz dual-mode power amplifier (PA) is implemented in 40-nm bulk CMOS technology.
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
To boost the amplifier performance at millimeter-wave (mmWave) frequencies, a new …
Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits
A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …
wave 5G systems, along with a comparison of the potential of different semiconductor …
Review of Ka-Band power amplifier
Z Wang, S Hu, L Gu, L Lin - Electronics, 2022 - mdpi.com
With the increase in the demand for high-speed transmission communication, satellite
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …
20.6 A 28GHz efficient linear power amplifier for 5G phased arrays in 28nm bulk CMOS
Rapidly growing demand for broadband-cellular-data traffic is driving fifth-generation (5G)
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
wireless standardization towards the deployment of gigabit-per-second mm-Wave …
45-nm CMOS SOI technology characterization for millimeter-wave applications
This paper presents an in-depth study of a 45-nm CMOS silicon-on-insulator (SOI)
technology. Several transistor test cells are characterized and the effect of finger width, gate …
technology. Several transistor test cells are characterized and the effect of finger width, gate …
Frequency reconfigurable mm-wave power amplifier with active impedance synthesis in an asymmetrical non-isolated combiner: Analysis and design
CR Chappidi, K Sengupta - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A frequency reconfigurable millimeter-wave (mm-wave) power amplifier (PA), which can be
programmed to operate efficiently for a wide swathe of the spectrum, approaching an …
programmed to operate efficiently for a wide swathe of the spectrum, approaching an …
High-power high-efficiency class-E-like stacked mmWave PAs in SOI and bulk CMOS: Theory and implementation
A Chakrabarti, H Krishnaswamy - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
<? Pub Dtl=""?> Series stacking of multiple devices is a promising technique that can help
overcome some of the fundamental limitations of CMOS technology in order to improve the …
overcome some of the fundamental limitations of CMOS technology in order to improve the …
Performance limits, design and implementation of mm-wave SiGe HBT class-E and stacked class-E power amplifiers
<? Pub Dtl=""?> Design equations and performance limits of Class-E power amplifiers at mm-
waves, including the limitations imposed by active and passive devices in a given …
waves, including the limitations imposed by active and passive devices in a given …
Analysis and design of millimeter-wave power amplifier using stacked-FET structure
A new analysis methodology for millimeter-wave stacked-FET power amplifier design is
proposed with a focus on the output power improvement by adjusting the complex load …
proposed with a focus on the output power improvement by adjusting the complex load …