Review of technologies for high-voltage integrated circuits
High-Voltage power Integrated Circuits (HVICs) are widely used to realize high-efficiency
power conversions (eg, AC/DC conversion), gate drivers for power devices and LED …
power conversions (eg, AC/DC conversion), gate drivers for power devices and LED …
A Novel Ultralow RON,sp Triple RESURF LDMOS With Sandwich npn Layer
M Qiao, Y Li, L Liang, Z Li… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This article proposes a novel ultralow specific ON-resistance () triple reduced surface field
(RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich npn layer. Compared …
(RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich npn layer. Compared …
Novel LDMOS optimizing lateral and vertical electric field to improve breakdown voltage by multi-ring technology
Z Dong, B Duan, C Fu, H Guo, Z Cao… - IEEE Electron Device …, 2018 - ieeexplore.ieee.org
A novel lateral double-diffused MOSFET with multi-ring substrate (MR LDMOS) is proposed.
New high electric field peaks are introduced by the MR due to the effect of the electric field …
New high electric field peaks are introduced by the MR due to the effect of the electric field …
A review of high-voltage integrated power device for AC/DC switching application
M Qiao, L Liang, J Zu, D Hou, Z Li, B Zhang - Microelectronic Engineering, 2020 - Elsevier
High-voltage (HV) integrated power devices are widely used in many applications, including
alternating current/direct current (AC/DC) power converter, HV gate driver integrated circuit …
alternating current/direct current (AC/DC) power converter, HV gate driver integrated circuit …
Novel Superjunction LDMOS With a High-K Dielectric Trench by TCAD Simulation Study
Z Cao, B Duan, H Song, F Xie… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A novel superjunction (SJ) lateral double-diffused MOSFET (LDMOS) with a deep High-K
(HK) dielectric trench (HK SJ-LDMOS) is proposed and its mechanism is investigated by …
(HK) dielectric trench (HK SJ-LDMOS) is proposed and its mechanism is investigated by …
Analytical Model and New Structure of the Variable- Dielectric Trench LDMOS With Improved Breakdown Voltage and Specific ON-Resistance
K Zhou, X Luo, Z Li, B Zhang - IEEE Transactions on Electron …, 2015 - ieeexplore.ieee.org
A novel Silicon-on-Insulator laterally double-diffused metal-oxide-semiconductor transistor
with ultralow specific ON-resistance (R ON, sp) is proposed, and its analytical model for the …
with ultralow specific ON-resistance (R ON, sp) is proposed, and its analytical model for the …
Channel length optimization for planar LDMOS field-effect transistors for low-voltage power applications
We identify an optimum channel length for planar Laterally Diffused Metal-Oxide-
Semiconductor (LDMOS) field-effect transistors, in terms of the specific on-resistance …
Semiconductor (LDMOS) field-effect transistors, in terms of the specific on-resistance …
Experimental study of 600 V accumulation-type lateral double-diffused MOSFET with ultra-low on-resistance
G Deng, X Luo, Z Zhao, J Wei, S Cheng… - IEEE Electron …, 2020 - ieeexplore.ieee.org
A novel Lateral Double-Diffused MOSFET (LDMOSFET) with ultra-low resistance is
investigated by experiments. The proposed LDMOSFET features an extended gate field …
investigated by experiments. The proposed LDMOSFET features an extended gate field …
A novel LDMOS with optimized electric field distribution to eliminate substrate assisted depletion effect
S Zhu, H Jia, Y Yang - Microelectronics Journal, 2022 - Elsevier
A novel N-channel Super Junction Lateral double-diffused MOSFET (SJ LDMOS) with
optimized electric field distribution is proposed. To eliminate substrate assisted depletion …
optimized electric field distribution is proposed. To eliminate substrate assisted depletion …
A novel variation of lateral doping technique in SOI LDMOS with circular layout
The breakdown characteristics of a practical silicon-on-insulator (SOI) lateral power device
are generally limited by the 3-D curvature effect induced by its circular layout. The …
are generally limited by the 3-D curvature effect induced by its circular layout. The …