Spin injection in high-quality epitaxial M n 5 G e 3 Schottky contacts on n-type Ge has been
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …

High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been
grown on Ge (111) substrates by solid phase epitaxy. The basal hexagonal plane of Mn 5 …

The development of active spintronic devices, such as spin-transistors and spin-diodes, calls
for new materials that are able to efficiently inject the spin-polarized current into group-IV …

Here we investigate analytical models to understand magnetic and magnetocaloric
properties of Mn 5 Ge 2.9 Ag 0.1 compound prepared by arc-melting method. The Mn 5 Ge …

Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and
reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic …

The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge (001)
substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under …

Interesting results have been reported concerning the magnetic properties of the Mn 5 Ge 3
compound, opening the road to possibly create spin injectors in Ge. However, a process …

Epitaxial ferromagnetic Mn 5 Ge 3 thin films were stabilized on GaSb (001) and GaAs (001)
substrates using molecular beam epitaxy. Compared to bulk Mn 5 Ge 3 materials, an …

State of the art density functional theory (DFT) calculations within the generalized gradient
approximation (GGA) are reported for the (metastable) cubic MnGe with chiral B20 structure …

The effect of Ge buffer layer thickness on the formation of epitaxial Mn 5 Ge 3 films and their
magnetic properties has been investigated. Epitaxial ferromagnetic Mn 5 Ge 3 thin films …