Lateral ordering of heteroepitaxial islands can be conveniently achieved by suitable pit-
patterning of the substrate prior to deposition. Controlling shape, orientation, and size of the …

The development of three-dimensional architectures in semiconductor technology is paving
the way to new device concepts for various applications, from quantum computing to single …

Shadowing effects during the growth of nano-and microstructures are crucial for the
realization of several technological applications. They are given by the shielding of the …

We simulate the morphological evolution of Ge microcrystals, grown out-of-equilibrium on
deeply patterned Si substrates, as resulting from surface diffusion driven by the tendency …

3C-SiC is a promising material for low-voltage power electronic devices but its growth is still
challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable …

In this paper we present the exceptional thermal strain release provided by micrometric Si
pillar arrays to Ge epitaxial patches suspended on them, for different pillar aspect ratios and …

The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si (111),
causing severe wafer bending and cracking, is demonstrated to be elastically quenched by …

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on
Si (001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was …

Two new templates for strain-relaxed detachable Ge are introduced. The first one is based
on epitaxial growth of Ge on a Si-on-Nothing (SiON) platform while the second consists of …

This work investigates layers of densely spaced SiGe microcrystals epitaxially formed on
patterned Si and grown up to extreme heights of 40 and 100 µm using the rocking curve …