Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
HR Qi, LK Yi, JL Huang, ST Liu, F Liang, M Zhou… - Journal of Alloys and …, 2018 - Elsevier
The effect of carbon impurities on electrical resistivity of Mg doped GaN grown by metal
organic chemical vapor deposition (MOCVD) was investigated. It was noted that when the …
organic chemical vapor deposition (MOCVD) was investigated. It was noted that when the …
DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor
BG Shohany, MR Roknabadi, A Kompany - Computational Materials …, 2018 - Elsevier
The chemical stability of graphene and graphdiyne means that they can be stacked in
different combinations to produce a new nanotransistor for ultra-high frequency applications …
different combinations to produce a new nanotransistor for ultra-high frequency applications …
A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability
H Zhang, Q Zhang, M Lin, W Lü, Z Zhang… - Journal of …, 2018 - iopscience.iop.org
To improve the logic stability of conventional multi-valued logic (MVL) circuits designed with
a GaN-based resonate tunneling diode (RTD), we proposed a GaN/InGaN/AlGaN multi …
a GaN-based resonate tunneling diode (RTD), we proposed a GaN/InGaN/AlGaN multi …
[HTML][HTML] Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN …
S Chowdhury, D Biswas - AIP Advances, 2015 - pubs.aip.org
Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al 0.2 Ga 0.8 N/GaN
heterostructures on Si (111) substrate with three buffer thickness (600 nm/400 nm/200 nm) …
heterostructures on Si (111) substrate with three buffer thickness (600 nm/400 nm/200 nm) …
Improving the peak current density of resonant tunneling diode based on InP substrate
Resonant tunneling diodes (RTD) have the potential for compact and coherent terahertz
(THz) sources operating at room temperature, but their low output power severely restricts …
(THz) sources operating at room temperature, but their low output power severely restricts …
Physical modelling of gallium nitride (GaN) based double barrier quantum well device
WNN Zaharim, NZI Hashim… - … Conference on Robotics …, 2019 - Springer
This paper describes the physical simulation of Al 0.3 Ga 0.7 N/GaN-based double barrier
resonant tunnelling diode (RTD) with cubic-GaN structure using Silvaco ATLAS. Cubic-GaN …
resonant tunnelling diode (RTD) with cubic-GaN structure using Silvaco ATLAS. Cubic-GaN …