Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga 2 O 3), is a complex process. This paper presents the …
T Yang, C Shou, A Almujtabi, QS Mahmud… - ACS Applied …, 2024 - ACS Publications
As a promising Ga2O3-based ultrawide bandgap semiconductor, beta (β) phase and spinel phase magnesium gallium oxide (MgGaO) with tunable bandgap larger than 4.8 eV has …
Y Bu, J Wei, Q Sai, H Qi - CrystEngComm, 2023 - pubs.rsc.org
Twins are common defects in β-Ga2O3 crystals that affect the development of large single crystal substrates. To investigate the generation and development of twins, we grew a (100) …
The effect of the sintering atmosphere on the structural, electrical, and luminescence properties of gallium oxide ceramics was studied using X-ray diffraction, scanning electron …
Undoped and Mg2+-doped β-Ga2O3-20% In2O3 solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to …
Rare earth (RE) elements are important for the optical tuning of wide bandgap oxides (WBO) such as β-Ga2O3 or ZnO, because β-Ga2O3: RE or ZnO: RE show narrow emission lines in …