Nano/microstructures of compound semiconductors such as gallium arsenide (GaAs)
demonstrate enormous potential for advanced photonic technologies as they provide …

Ultrawide-bandgap (UWBG) deep-ultraviolet photodetectors have received great attention
due to their versatile applications in the fields of scientific research, civilian infrastructure …

Graphene holds great promise in optoelectronics because of its high broadband light
absorption across a wide range of wavelengths. Despite low optical absorption, various …

Here, we have designed a novel perovskite-based self-powered deep ultraviolet (DUV)
photodetector using hybrid heterostructure of-Ga2O3 nanowire (NW)/CH3NH3PbI3 (named …

As a powerful complement to positive photoconductance (PPC), negative photoconductance
(NPC) holds great potential for photodetector. However, the slow response of NPC relative …

Narrow-bandgap germanium–tin (GeSn) is employed to fabricate metal–semiconductor–
metal (MSM) near-infrared photodetectors with low-dark currents and high responsivity. To …

In this study, the authors have reported the impact of post-treatment via exposure to acid on
single walled carbon nanotubes (SWNTs) thin film (TF) based SWNT/ZnO Nanowire (NW) …

The authors here have reported two low-powered UV photodetectors designed with and
without NiO as a hole transport layer (HTL) having the hybrid heterostructure of ZnO/CH 3 …

Accurate spectral irradiance measurement in the near-infrared range is significant for the
design and characterization of photodetector and photovoltaic cells. Approximation method …

Quantum dot (QD) devices show better structural stability among various photovoltaic
technologies, including silicon, organic, and thin film solar cells. The QD-based solar cells …