Memristors have recently attracted significant interest due to their applicability as promising
building blocks of neuromorphic computing and electronic systems. The dynamic …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

During the last half century, the tremendous development of computers based on von
Neumann architecture has led to the revolution of the information technology. However, von …

We review the recent developments in the electric field control of magnetism in multiferroic
heterostructures, which consist of heterogeneous materials systems where a …

Resistive random access memories (ReRAM) form an emerging type of non‐volatile
memories, based on an electrically driven resistive switching (RS) of an active material. This …

One of today's most exciting research frontier and challenge in condensed matter physics is
known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of …

Resistance random-access memory (RRAM) is a promising candidate for both the next-
generation non-volatile memory and the key element of neural networks. In this article …

Mott transitions induced by strong electric fields are receiving growing interest. Recent
theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators …

The fundamental building blocks of modern silicon-based microelectronics, such as double
gate transistors in non-volatile Flash memories, are based on the control of electrical …

Two noncentrosymmetric (NCS) quaternary selenides, PbGa2SiSe6 (1) and PbGa2GeSe6
(2), with second-order nonlinear optical (NLO) responses, were synthesized by a …