Electronic defects in amorphous oxide semiconductors: A review
Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
Roles of hydrogen in amorphous oxide semiconductor
Amorphous oxide semiconductor represented by a-In-Ga-Zn-O is now used for thin-film
transistors in some of current flat-panel displays due to its high mobility and good stability …
transistors in some of current flat-panel displays due to its high mobility and good stability …
Low-temperature processable amorphous In-WO thin-film transistors with high mobility and stability
Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been
achieved using W-doped indium oxide semiconductors in a low-temperature process (∼ …
achieved using W-doped indium oxide semiconductors in a low-temperature process (∼ …
A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect
MG Kim, JH Jeong, JH Ma, MH Park, S Kim… - Journal of Materials …, 2023 - pubs.rsc.org
In the past few years, there has been growing interest in ultraviolet (UV) photodetectors for
various applications. A key requirement for UV photodetectors is the ability to exclusively …
various applications. A key requirement for UV photodetectors is the ability to exclusively …
Rapid thermal annealing effect of transparent ITO source and drain electrode for transparent thin film transistors
We investigated the rapid thermal annealing (RTA) sequence effect on the electrical, optical,
morphological, and structural properties of transparent thin film transistors (TTFTs) with an …
morphological, and structural properties of transparent thin film transistors (TTFTs) with an …
Water-mediated photochemical treatments for low-temperature passivation of metal-oxide thin-film transistors
The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-
film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation–water treatment …
film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation–water treatment …
O3-Annealing Effect on the Etching Resilience of a TiO2/Al2O3 filter Prepared by Atomic Layer Deposition
This research investigates the improvements of ozone (O3) annealing on the optical and
etching characteristics of TiO2/Al2O3 multilayer band-pass filters designed for potential …
etching characteristics of TiO2/Al2O3 multilayer band-pass filters designed for potential …
Glucose sensing using functionalized amorphous In–Ga–Zn–O field-effect transistors
X Du, Y Li, JR Motley, WF Stickle… - ACS applied materials & …, 2016 - ACS Publications
Recent advances in glucose sensing have focused on the integration of sensors into contact
lenses to allow noninvasive continuous glucose monitoring. Current technologies focus …
lenses to allow noninvasive continuous glucose monitoring. Current technologies focus …
Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone
We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various
oxidants, such as H2O, O2 plasma, and O3, on In–Ga–Zn–O thin-film transistors (IGZO …
oxidants, such as H2O, O2 plasma, and O3, on In–Ga–Zn–O thin-film transistors (IGZO …
Evolution of defect structures and deep subgap states during annealing of amorphous In-Ga-Zn oxide for thin-film transistors
We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn
oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray …
oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray …