The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl 3
source, is widely used as a dopant source in the manufacturing of crystalline silicon solar …

In silicon power semiconductors, platinum is used to improve the switching characteristics of
the devices by adjusting the lifetime of the minority charge carriers. Platinum diffusion in …

Fission times of uraniumlike nuclei with excitation energies up to about 250 MeV have been
inferred from blocking effects in a single crystal. They are found longer by at least 1 order of …

This article presents experimental and simulation studies on the formation of recombination‐
active ring‐like defects during thermal donor (TD) formation at 450° C in n‐type Czochralski …

Recent years have seen great advances in our understanding and modeling of the coupled
diffusion of dopants and defects in silicon during integrated circuit fabrication processes …

Copper contamination causes minority carrier lifetime degradation in p-type silicon bulk
under illumination, leading to considerable efficiency losses in affected solar cells. Although …

It has been observed that {311} defects form, grow, and eventually dissolve during
annealing of Si-implanted silicon wafers. The fact that for subamorphizing silicon implants …

This article discusses etching and boron diffusion in Si for the purpose of fabricating
micromachined devices with high aspect ratio features. The etch rate of Si under various …

A model for the precipitation of oxygen and associated dislocation loops in Czochralski-
grown silicon is presented. Beginning with kinetic rate equations describing the growth and …

A moment-based carbon precipitation model is developed based on ab initio calculations of
the energetics of carbon interstitial clusters and silicon carbide precipitates. A metal …