[HTML][HTML] A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
High-temperature performance of AlN MESFETs with epitaxially grown n-type AlN channel layers
M Hiroki, Y Taniyasu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
We fabricated AlN metal semiconductor field effect transistors (MESFETs) with an epitaxially
grown n-type AlN channel layer and characterized the temperature dependence of their …
grown n-type AlN channel layer and characterized the temperature dependence of their …
[HTML][HTML] Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein… - Journal of Vacuum …, 2020 - pubs.aip.org
Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
Diamond-incorporated flip-chip integration for thermal management of GaN and ultra-wide bandgap RF power amplifiers
D Shoemaker, M Malakoutian… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
GaN radio frequency (RF) power amplifiers offer many benefits including high power
density, reduced device footprint, high operating voltage, and excellent gain and power …
density, reduced device footprint, high operating voltage, and excellent gain and power …
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
AG Baca, BA Klein, JR Wendt… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and
85%(70%) Al in the barrier (channel) were evaluated for RF performance. The dc …
85%(70%) Al in the barrier (channel) were evaluated for RF performance. The dc …
Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after
GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide …
GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide …
Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
This letter reports the demonstration of N-polar Al 0.8 Ga 0.2 N/AlN continuously-graded-
channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source …
channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source …
[HTML][HTML] Plasma etching of wide bandgap and ultrawide bandgap semiconductors
The precise patterning of front-side mesas, backside vias, and selective removal of ternary
alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN …
alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN …
Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz
Abstract An Al 0.75 Ga 0.25 N/Al 0.6 Ga 0.4 N heterostructure field effect transistor with
graded MBE-regrown contacts is designed, grown, and fabricated on AlN/sapphire …
graded MBE-regrown contacts is designed, grown, and fabricated on AlN/sapphire …
Radiation response of AlGaN-channel HEMTs
MJ Martinez, MP King, AG Baca… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
We present heavy ion and proton data on AlGaN high-voltage HEMTs showing single event
burnout (SEB), total ionizing dose, and displacement damage responses. These are the first …
burnout (SEB), total ionizing dose, and displacement damage responses. These are the first …