Reconfigurable antennas: A review of recent progress and future prospects for next generation

RJ Beneck, A Das, G Mackertich-Sengerdy… - Progress In …, 2021 - jpier.org
Reconfigurable antennas are devices that can dynamically alter their geometry and/or
electromagnetic properties tofacilitate different behaviors. Numerous approaches for …

A review on GeTe thin film-based phase-change materials

K Singh, S Kumari, H Singh, N Bala, P Singh… - Applied …, 2023 - Springer
Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family,
which undergoes reversible transition between amorphous and crystalline phase when …

A four-terminal, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation

N El-Hinnawy, P Borodulin, B Wagner… - IEEE Electron …, 2013 - ieeexplore.ieee.org
An inline chalcogenide phase-change radio-frequency (RF) switch using germanium
telluride and driven by an integrated, electrically isolated thin-film heater for thermal …

Self-aligned nanotube–nanowire phase change memory

F Xiong, MH Bae, Y Dai, AD Liao, A Behnam… - Nano …, 2013 - ACS Publications
A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the
smallest and most energy-efficient devices that can function reliably. Unlike charge-based …

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

SD Ha, Y Zhou, CJ Fisher, S Ramanathan… - Journal of Applied …, 2013 - pubs.aip.org
Vanadium dioxide (VO 2) is a correlated electron system that features a metal-insulator
phase transition (MIT) above room temperature and is of interest in high speed switching …

A 7.3 THz cut-off frequency, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation

N El-Hinnawy, P Borodulin, BP Wagner… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
An inline chalcogenide phase change RF switch utilizing germanium telluride (GeTe) and
driven by an integrated, electrically isolated thin film heater for thermal actuation has been …

AlN barriers for capacitance reduction in phase-change RF switches

G Slovin, M Xu, J Paramesh… - IEEE Electron …, 2016 - ieeexplore.ieee.org
We demonstrate four-terminal GeTe-based RF switches with independent thermal actuation
(switching). These devices incorporate an AlN-based dielectric separating high-conductivity …

[HTML][HTML] Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials

N El-Hinnawy, P Borodulin, BP Wagner… - Applied Physics …, 2014 - pubs.aip.org
A high performance RF (radio-frequency) switch based on the phase change effect in
germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent …

[HTML][HTML] Wide range optical and electrical contrast modulation by laser-induced phase transitions in GeTe thin films

NN Eliseev, AV Kiselev, VV Ionin, VA Mikhalevsky… - Results in Physics, 2020 - Elsevier
The paper presents the results of a computational thermo-kinetic model of laser heating of
GeTe thin films and their subsequent thermoconductive and radiative cooling. A comparison …

Piezoelectric MEMS resonator with integrated phase change material switches

M Rinaldi, G Hummel - US Patent 10,447,234, 2019 - Google Patents
A monolithic integration of phase change material (PCM) switches with a MEMS resonator is
provided to implement switching and reconfiguration functionalities. MEMS resonator …