Interface Engineering Boosting High Power Density and Conversion Efficiency in Mg2Sn0.75Ge0.25‐Based Thermoelectric Devices

X Wu, Y Lin, C Liu, Z Han, H Li, Y Wang… - Advanced Energy …, 2023 - Wiley Online Library
Electrode contact interfaces for practical thermoelectric (TE) devices require high bonding
strength, low specific contact resistivity, and superb stability. Herein, the state‐of‐the‐art …

Bonding performance of Ag–Cu brazing solders and half-Heusler alloys for high-performance thermoelectric generators

H He, Y Zhang, C Niu, Y Zhao, H Ren… - … Applied Materials & …, 2022 - ACS Publications
Due to the uncertainty of the brazing solder composition and its unknown effect on the long-
term stability of the interface, the brazing interface connection process for half-Heusler (hH) …

Thermoelectric and mechanical characterization of the utilization of FeTe as an electrode for iodine-doped PbTe

S Chen, Y Wang, Y Wang, W Fan, J Guo, J Chen… - Journal of Alloys and …, 2022 - Elsevier
In addition to the thermal and electrical characteristics of the thermoelectric material, the
energy conversion efficiency of TE devices is influenced by other factors including the …

Improvement of stability in a Mg2Si-based thermoelectric single-leg device via Mg50Si15Ni50 barrier

J Chen, W Fan, Y Wang, Y Jiang, S Ohno… - Journal of Alloys and …, 2022 - Elsevier
In this study we investigated the nature and stability of the interfaces between Mg 2.05 Si
0.98 Bi 0.02 as the TE material and Ni and Mg 50 Si 15 Ni 50 as barriers. Single-leg devices …

Applications of thermodynamic calculations to practical TEG design: Mg 2 (Si 0.3 Sn 0.7)/Cu interconnections

S Tumminello, S Ayachi, SG Fries, E Müller… - Journal of Materials …, 2021 - pubs.rsc.org
Magnesium silicide stannide solid solutions, Mg2 (Si, Sn), are prominent materials in the
development of devices for thermoelectric energy conversion for intermediate operating …

Improvement of Contact and Bonding Performance of Mg2Si/Mg2SiNi3 Thermoelectric Joints by Optimizing the Concentration Gradient of Mg

S Chen, J Chen, W Fan, Y Wang, J Guo… - Journal of Electronic …, 2022 - Springer
Mg2SiNi3, is a topologically densely packed intermetallic compound (TCP-IMC) and an
excellent diffusion barrier material between nickel and Mg2Si-based thermoelectric material …

Preparation and characterization of Ni-doped Mg, Si, Ge antifluorite, and their thermoelectric properties

C Bouhafs, A Kahlessenane, M Chitroub - Journal of Materials Science …, 2023 - Springer
The need for clean energy sources led researchers to increase their research on promising
and non-fossil sources, such as thermoelectric materials, and torus this study we put the …

Controlled thermal expansion and thermoelectric properties of Mg2Si/Si composites

J Fu, S Tanusilp, M Kumagai, Y Ohishi… - Journal of Applied …, 2021 - pubs.aip.org
A thermoelectric module is composed of n-and p-type materials, and its performance is
evaluated by the materials' dimensionless figure of merit, zT, which is expected to be as high …