Ion beams in materials processing and analysis
B Schmidt, K Wetzig - 2012 - books.google.com
A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …
including the basics of ion beam physics and technology. The physics of ion-solid …
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low-and high-energy electrons
Local lifetime control by proton and alpha-particle irradiation with energies from 1.8 to 12.1
MeV and doses up to 5× 1012cm− 2 was faced with two types of electron irradiation giving …
MeV and doses up to 5× 1012cm− 2 was faced with two types of electron irradiation giving …
Optimization of SiC power pin diode parameters by proton irradiation
P Hazdra, S Popelka, A Schöner - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Local lifetime reduction by proton irradiation was used to optimize the static and dynamic
parameters of a 10 kV SiC pin diode. Carrier lifetime was reduced locally at the anode side …
parameters of a 10 kV SiC pin diode. Carrier lifetime was reduced locally at the anode side …
The 150 mm RC-IGCT: A device for the highest power requirements
T Wikström, M Arnold, T Stiasny… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
A 4500V RC-IGCT switching more than 10 kA in both switch and diode mode was
developed for application in cascaded multilevel topologies. The performance was …
developed for application in cascaded multilevel topologies. The performance was …
Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode
The impact of local lifetime control by 1H+ and 4He2+ irradiation on blocking characteristics
of power P–i–N diodes was studied in the dose range up to 5× 1012cm− 2. Energies and …
of power P–i–N diodes was studied in the dose range up to 5× 1012cm− 2. Energies and …
Radiation-enhanced diffusion of palladium for a local lifetime control in power devices
Palladium (Pd) diffusion from a surface layer enhanced by defects from a helium (He)
irradiation is shown to provide a local lifetime control in a power pin diode annealed …
irradiation is shown to provide a local lifetime control in a power pin diode annealed …
Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy
Current transient spectroscopy (CTS) using high relaxation voltages up to 1 kV is shown to
be an effective tool for non-destructive characterization of radiation defect profiles in silicon …
be an effective tool for non-destructive characterization of radiation defect profiles in silicon …
Materials processing
B Schmidt, K Wetzig, B Schmidt, K Wetzig - Ion beams in materials …, 2013 - Springer
Materials processing by implantation of energetic ions into solid surfaces has been applied
in many fields of modern production technologies. For the last 40 years, ion implantation …
in many fields of modern production technologies. For the last 40 years, ion implantation …
New plasma shaping technology for optimal high voltage diode performance
In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV
diodes for next generation high power IGBT modules will be presented. The new diode …
diodes for next generation high power IGBT modules will be presented. The new diode …
Analysis of lifetime control in high-voltage IGBTs
X Yuan, F Udrea, L Coulbeck, PR Waind… - Solid-State …, 2002 - Elsevier
This paper discusses the effectiveness of the lifetime control technology in high-voltage
insulated gate bipolar transistors (IGBTs) by using both numerical simulations and a two …
insulated gate bipolar transistors (IGBTs) by using both numerical simulations and a two …