A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried
out. The electrical and thermal performances in two device structures were analyzed based …

The physical parameters of digital devices have been affected by process variability The
paper is focused on subthreshold performance characterization of FET with Visual TCAD …

This chapter describes an ultrasonic sensor that can gauge how far certain motor vehicle
points are from the ground. The sensor works by tracking how long an ultrasonic pulse takes …

Large number of electronic devices based on semiconductors have been worked upon
since the discovery of first Bipolar Junction Transistor (BJT) in 1947 by Shockley. Same have …

Summary Fin Field Effect Transistor (FinFET) has proven to be an alternative to the MOSFET
in the development of low power analog and digital integrated circuits with lower short …

A comparison on Rectangular and Triangular FinFETs is carried out. The results of the
TECHNOLOGY COMPUTER-AIDED DESIGN (TCAD) simulation were used to analyze the …

Over the decades of development, electronic design automation (EDA) has been widely
applied in most electronic design problems, especially in advanced and sophisticated digital …

The consequences of heavy-ion strikes on a fin field-effect transistor-based low-noise
amplifier (LNA) are analyzed in this paper. A popular LNA topology, cascoded LNA, is …

A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried
out. The electrical and thermal performances in two device structures were analyzed based …

This paper focuses on designing a Cylindrical Metal Oxide Semiconductor Field Effect
Transistor (MOSFET) using Sentaurus Technology Computer Aided Design (TCAD). By …