Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …

The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …

In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating
effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between …

In this article, NSFET performances including DC electrical characteristics, analog/RF
metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation …

Reliability of the electronic circuits is one of the most prominent factor in the development of
very large-scale integration (VLSI) industry. Huge demand for compact size and high …

A physics-based framework is incorporated in TCAD to model the primary mechanisms
responsible for Negative Bias Temperature Instability (NBTI) in P channel High-K Metal Gate …

As we move toward ultradeep submicron technology nodes, device aging is getting more
severe. The purpose of this article is to provide an in-depth overview of current optimization …

This work primarily focuses on the degradation degree of bulk current (IB) for 28 nm stacked
high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …

The contribution of hole trapping and detrapping (ΔV_HT) to overall threshold voltage shift
(ΔV_T) during and after Negative Bias Temperature Instability (NBTI) stress is obtained …

The coupling effect of negative bias temperature instability (NBTI) and total ionizing dose
(TID) was investigated by simulation based on the fully depleted silicon on insulator (FDSOI) …